The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes
In this work, the electrical properties of the Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> surface resulted...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2025-03-01
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| Col·lecció: | Micromachines |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2072-666X/16/4/369 |
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