Investigation on <i>β</i>-Ga₂O₃-Based Schottky Barrier Diode with Floating Metal Rings

In this study, the performance of Schottky barrier diodes (SBD) based on <i>β</i>-Ga₂O₃ with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of <i>β</i>-Ga₂O<sub>...

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Bibliografiska uppgifter

Huvudupphov:	Suhao Yao, Kemeng Yang, Lili Yang, Ganrong Feng, Maolin Zhang, Yufeng Guo, Weihua Tang
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2023-04-01
Serie:	Crystals
Ämnen:	Schottky barrier diodes <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> floating metal rings technology computer-aided design breakdown voltage
Länkar:	https://www.mdpi.com/2073-4352/13/4/666
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