The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga₂O₃ Schottky Barrier Diodes

In this work, the electrical properties of the Ga₂O₃ Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the <i>β</i>-Ga₂O₃ surface resulted...

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Detalhes bibliográficos

Principais autores:	Lei Xie, Tao Zhang, Shengrui Xu, Huake Su, Hongchang Tao, Yuan Gao, Xu Liu, Jincheng Zhang, Yue Hao
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2025-03-01
coleção:	Micromachines
Assuntos:	Ga<sub>2</sub>O<sub>3</sub> SBDs W/Au Schottky contact barrier inhomogeneity
Acesso em linha:	https://www.mdpi.com/2072-666X/16/4/369
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