Electrical Characterizations of Planar Ga₂O₃ Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga₂O₃ crystal substrate. At the current stage, for high resistance un-doped Ga₂O₃ films and/or bulk substrates, the carrier concentra...

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Auteurs principaux:	Shiyu Zhang, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu, Weihua Tang
Format:	Artigo
Langue:	Inglês
Publié:	MDPI AG 2021-03-01
Collection:	Micromachines
Sujets:	Ga<sub>2</sub>O<sub>3</sub> Schottky diode I–V C–V
Accès en ligne:	https://www.mdpi.com/2072-666X/12/3/259
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