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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow ra...

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Principais autores: Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2020-04-01
Serier:Nanomaterials
Fag:
GaN
inductively coupled plasma (ICP)
mesa
sidewall profile
quasi-vertical
Schottky barrier diode (SBD)
Online adgang:https://www.mdpi.com/2079-4991/10/4/657
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