Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow ra...

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מידע ביבליוגרפי

Principais autores:	Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2020-04-01
סדרה:	Nanomaterials
נושאים:	GaN inductively coupled plasma (ICP) mesa sidewall profile quasi-vertical Schottky barrier diode (SBD)
גישה מקוונת:	https://www.mdpi.com/2079-4991/10/4/657
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