Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers w...

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Detalhes bibliográficos

Principais autores:	Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-09-01
coleção:	Micromachines
Assuntos:	dynamic on-state resistance (R<sub>on</sub>) field plate (FP) high-temperature gate bias (HTGB) high-temperature reverse bias (HTRB) normally off operation off-state breakdown voltage
Acesso em linha:	https://www.mdpi.com/2072-666X/13/9/1554
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