Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field–plate is well kno...

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Detalhes bibliográficos

Principais autores:	Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2021-01-01
coleção:	IEEE Access
Assuntos:	Capacitance voltage (CV) electron temperature GaN HEMT gate shape leakage current
Acesso em linha:	https://ieeexplore.ieee.org/document/9481884/
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