The Influence of Short-Type Heaters and Their Positions on the Oxygen Concentration in the Growth of 300 mm Single Crystal Silicon by the Czochralski Method

The inevitable introduction of oxygen into Czochralski-method-grown single crystal silicon, facilitated by the use of quartz crucibles, can result in the failure of chips and devices. Both the size and position of the heater exert a significant influence on the oxygen concentration within the Czochr...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Yunyun Zhu, Deng Deng, Ruifeng Qin, Zhiyuan Shan, Yang Li, Guohu Zhang
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2026-01-01
Цуврал:	Crystals
Нөхцлүүд:	Czochralski method single crystal silicon oxygen concentration heaters cusp magnetic field
Онлайн хандалт:	https://www.mdpi.com/2073-4352/16/1/45
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!