The Influence of Short-Type Heaters and Their Positions on the Oxygen Concentration in the Growth of 300 mm Single Crystal Silicon by the Czochralski Method
The inevitable introduction of oxygen into Czochralski-method-grown single crystal silicon, facilitated by the use of quartz crucibles, can result in the failure of chips and devices. Both the size and position of the heater exert a significant influence on the oxygen concentration within the Czochr...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2026-01-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2073-4352/16/1/45 |
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