The Influence of Short-Type Heaters and Their Positions on the Oxygen Concentration in the Growth of 300 mm Single Crystal Silicon by the Czochralski Method

The inevitable introduction of oxygen into Czochralski-method-grown single crystal silicon, facilitated by the use of quartz crucibles, can result in the failure of chips and devices. Both the size and position of the heater exert a significant influence on the oxygen concentration within the Czochr...

पूर्ण विवरण

ग्रंथसूची विवरण

मुख्य लेखकों:	Yunyun Zhu, Deng Deng, Ruifeng Qin, Zhiyuan Shan, Yang Li, Guohu Zhang
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	MDPI AG 2026-01-01
श्रृंखला:	Crystals
विषय:	Czochralski method single crystal silicon oxygen concentration heaters cusp magnetic field
ऑनलाइन पहुंच:	https://www.mdpi.com/2073-4352/16/1/45
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