The Influence of Short-Type Heaters and Their Positions on the Oxygen Concentration in the Growth of 300 mm Single Crystal Silicon by the Czochralski Method
The inevitable introduction of oxygen into Czochralski-method-grown single crystal silicon, facilitated by the use of quartz crucibles, can result in the failure of chips and devices. Both the size and position of the heater exert a significant influence on the oxygen concentration within the Czochr...
保存先:
| 主要な著者: | , , , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2026-01-01
|
| シリーズ: | Crystals |
| 主題: | |
| オンライン･アクセス: | https://www.mdpi.com/2073-4352/16/1/45 |
| タグ: |
タグなし, このレコードへの初めてのタグを付けませんか!
|