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Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and dive...

Whakaahuatanga katoa

I tiakina i:
Ngā taipitopito rārangi puna kōrero
Ngā kaituhi matua: Mark Buckwell, Wing H. Ng, Daniel J. Mannion, Horatio R. J. Cox, Stephen Hudziak, Adnan Mehonic, Anthony J. Kenyon
Hōputu: Artigo
Reo:Inglês
I whakaputaina: Frontiers Media S.A. 2021-12-01
Rangatū:Frontiers in Nanotechnology
Ngā marau:
Urunga tuihono:https://www.frontiersin.org/articles/10.3389/fnano.2021.699037/full
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