Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and dive...
שמור ב:
| Principais autores: | , , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Frontiers Media S.A.
2021-12-01
|
| סדרה: | Frontiers in Nanotechnology |
| נושאים: | |
| גישה מקוונת: | https://www.frontiersin.org/articles/10.3389/fnano.2021.699037/full |
| תגים: |
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|