Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM

Abstract In the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties. However, the underlying mechanisms of resistive switching in GO remain unclear. We belie...

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Hlavní autoři:	Alireza Moazzeni, Hadi Riyahi Madvar, Samaneh Hamedi, Zoheir Kordrostami
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Nature Portfolio 2025-12-01
Edice:	Scientific Reports
Témata:	RRAM Resistive switching Graphene oxide Neuromorphic computing
On-line přístup:	https://doi.org/10.1038/s41598-025-32232-2
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