Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM
Abstract In the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties. However, the underlying mechanisms of resistive switching in GO remain unclear. We belie...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Portfolio
2025-12-01
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| Serier: | Scientific Reports |
| Fag: | |
| Online adgang: | https://doi.org/10.1038/s41598-025-32232-2 |
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