Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM
Abstract In the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties. However, the underlying mechanisms of resistive switching in GO remain unclear. We belie...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
|---|---|
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Portfolio
2025-12-01
|
| Σειρά: | Scientific Reports |
| Θέματα: | |
| Διαθέσιμο Online: | https://doi.org/10.1038/s41598-025-32232-2 |
| Ετικέτες: |
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|