Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and dive...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Frontiers Media S.A.
2021-12-01
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| Цуврал: | Frontiers in Nanotechnology |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.frontiersin.org/articles/10.3389/fnano.2021.699037/full |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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