Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II

To investigate how the process parameters of ultra-thin diamond grinding wheel dicing affect the dicing quality of silicon carbide (SiC) wafers, single-factor experiments were designed. This study examined the influence of key process parameters, including spindle speed, feed rate, and first dicing...

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Autors principals:	Jian Liu, Meiling Du, Jinzhong Wu, Sheng Gong, Penggen Ouyang, Shuai Huang, Fengjun Chen
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2026-06-01
Col·lecció:	Micromachines
Matèries:	dicing SiC wafer diamond grinding wheel process parameters response surface analysis
Accés en línia:	https://www.mdpi.com/2072-666X/17/6/686
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