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Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II

To investigate how the process parameters of ultra-thin diamond grinding wheel dicing affect the dicing quality of silicon carbide (SiC) wafers, single-factor experiments were designed. This study examined the influence of key process parameters, including spindle speed, feed rate, and first dicing...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Jian Liu, Meiling Du, Jinzhong Wu, Sheng Gong, Penggen Ouyang, Shuai Huang, Fengjun Chen
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2026-06-01
Schriftenreihe:Micromachines
Schlagworte:
dicing
SiC wafer
diamond grinding wheel
process parameters
response surface analysis
Online-Zugang:https://www.mdpi.com/2072-666X/17/6/686
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