A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter

In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four related indicators representing the performance of...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Aoxuan Wang, Hongliang Lu, Yuming Zhang, Jiale Sun, Zhijun Lv
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2024-08-01
Цуврал:	Nanomaterials
Нөхцлүүд:	ternary inverter multiple subthreshold voltage (multi-VTH) tunnel field-effect transistor (TFET) static noise margins (SNMs)
Онлайн хандалт:	https://www.mdpi.com/2079-4991/14/15/1307
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!