A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter

In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four related indicators representing the performance of...

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Autori principali:	Aoxuan Wang, Hongliang Lu, Yuming Zhang, Jiale Sun, Zhijun Lv
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2024-08-01
Serie:	Nanomaterials
Soggetti:	ternary inverter multiple subthreshold voltage (multi-VTH) tunnel field-effect transistor (TFET) static noise margins (SNMs)
Accesso online:	https://www.mdpi.com/2079-4991/14/15/1307
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