Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Abstract Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power. Memory concepts based on ferroelectric HfO2 like the ferroelectric field effect transistor (FeFET) and the ferroelectric random acces...

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Dettagli Bibliografici

Autori principali:	David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2023-09-01
Serie:	Advanced Physics Research
Soggetti:	coercive fields ferroelectrics hafnium zirconium oxide nanolaminates superlattices
Accesso online:	https://doi.org/10.1002/apxr.202200108
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