Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability
Abstract Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power. Memory concepts based on ferroelectric HfO2 like the ferroelectric field effect transistor (FeFET) and the ferroelectric random acces...
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| Hlavní autoři: | , , , , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Wiley-VCH
2023-09-01
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| Edice: | Advanced Physics Research |
| Témata: | |
| On-line přístup: | https://doi.org/10.1002/apxr.202200108 |
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