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Study on the high-power semi-insulating GaAs PCSS with quantum well structure

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, resp...

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Bibliografski detalji
Glavni autori: Chongbiao Luan, Bo Wang, Yupeng Huang, Xiqin Li, Hongtao Li, Jinshui Xiao
Format: Artigo
Jezik:Inglês
Izdano: AIP Publishing LLC 2016-05-01
Serija:AIP Advances
Online pristup:http://dx.doi.org/10.1063/1.4952595
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