Study on the high-power semi-insulating GaAs PCSS with quantum well structure
A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, resp...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
AIP Publishing LLC
2016-05-01
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| Serie: | AIP Advances |
| Accesso online: | http://dx.doi.org/10.1063/1.4952595 |
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