Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration
Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined as dependent on Al and In concentration. The energy levels, the wave functions and the finding probability of electron in quantum wel...
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| Principais autores: | , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Sivas Cumhuriyet Üniversitesi
2020-09-01
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| סדרה: | Cumhuriyet Science Journal |
| נושאים: | |
| גישה מקוונת: | https://dergipark.org.tr/en/download/article-file/864676 |
| תגים: |
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