A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors

In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the distributed resistance coefficient, which can be used when current flows vertically and horizontally. By predictin...

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Hlavní autoři:	Junha Suk, Yohan Kim, Jungho Do, Garoom Kim, Woojin Rim, Sanghoon Baek, Seiseung Yoon, Soyoung Kim
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2024-01-01
Edice:	IEEE Journal of the Electron Devices Society
Témata:	Nanosheet field-effect transistors (NSFETs) compact model gate resistance
On-line přístup:	https://ieeexplore.ieee.org/document/10699326/
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