A Review of Reliability in Gate-All-Around Nanosheet Devices
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, cou...
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2024-02-01
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| Serie: | Micromachines |
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| Accesso online: | https://www.mdpi.com/2072-666X/15/2/269 |
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