A Comprehensive Study of NF₃-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

In this paper, we demonstrate a comprehensive study of NF₃-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic etching process consisting of an oxidation treatment...

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Principais autores:	Xin Sun, Jiayang Li, Lewen Qian, Dawei Wang, Ziqiang Huang, Xinlong Guo, Tao Liu, Saisheng Xu, Liming Wang, Min Xu, David Wei Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2024-05-01
Series:	Nanomaterials
Assuntos:	gate-all-around Si nanosheet transistors inner spacer channel release isotropic dry etching
Acceso en liña:	https://www.mdpi.com/2079-4991/14/11/928
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