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A Comprehensive Study of NF<sub>3</sub>-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

In this paper, we demonstrate a comprehensive study of NF<sub>3</sub>-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic etching process consisting of an oxidation treatment...

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Wedi'i Gadw mewn:
Prif Awduron: Xin Sun, Jiayang Li, Lewen Qian, Dawei Wang, Ziqiang Huang, Xinlong Guo, Tao Liu, Saisheng Xu, Liming Wang, Min Xu, David Wei Zhang
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: MDPI AG 2024-05-01
Cyfres:Nanomaterials
Pynciau:
gate-all-around
Si nanosheet
transistors
inner spacer
channel release
isotropic dry etching
Mynediad Ar-lein:https://www.mdpi.com/2079-4991/14/11/928
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