Self-Organized Ge Nanospherical Gate/SiO<sub>2</sub>/Si<sub>0.15</sub>Ge<sub>0.85</sub>–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
We reported experimental fabrication and characterization of Si<sub>0.15</sub>Ge<sub>0.85</sub> n-MOSFETs comprising a gate-stacking heterostructure of Ge-nanospherical gate/SiO<sub>2</sub>/Si<sub>0.15</sub>Ge<sub>0.85</sub>-nanosheet on SOI (100) substrate in a self-organization approach. This uniq...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2019-01-01
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| Col·lecció: | IEEE Journal of the Electron Devices Society |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/8494752/ |
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