Reliability challenges of gate dielectric materials in transistors
Abstract The gate dielectric plays a critical role in field‐effect transistors since it determines the capability of gate control and the reliability of the device. In modern large scale integrated circuits, the stacking of high‐k oxides has become an indispensable strategy to enable the continuous...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2025-03-01
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| Col·lecció: | Information & Functional Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/ifm2.31 |
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