Improved <i>V</i><sub>th</sub> Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O<sub>2</sub> Plasma Treatment
The <i>V</i><sub>th</sub> stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O<sub>2</sub> plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al<...
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| Autores principales: | , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2024-03-01
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| Colección: | Nanomaterials |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2079-4991/14/6/523 |
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