Improved <i>V</i>_th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O₂ Plasma Treatment

The <i>V</i>_th stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O₂ plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al<...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu, Min Xu
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2024-03-01
Sarja:	Nanomaterials
Aiheet:	AlGaN/GaN MIS-HEMT threshold voltage stability gate reliability
Linkit:	https://www.mdpi.com/2079-4991/14/6/523
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