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Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO<sub>2</sub> Deposited by RF Plasma Sputter

In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO<sub>2</sub>) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through RF magnetron sputtering. Annealing...

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Príomhchruthaitheoirí: Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo
Formáid: Artigo
Teanga:Inglês
Foilsithe / Cruthaithe: MDPI AG 2024-08-01
Sraith:Nanomaterials
Ábhair:
Rochtain ar líne:https://www.mdpi.com/2079-4991/14/17/1386
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