Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO<sub>2</sub> Deposited by RF Plasma Sputter
In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO<sub>2</sub>) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through RF magnetron sputtering. Annealing...
Gorde:
| Egile Nagusiak: | , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2024-08-01
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| Saila: | Nanomaterials |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2079-4991/14/17/1386 |
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