Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO₂ Deposited by RF Plasma Sputter

In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO₂) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through RF magnetron sputtering. Annealing...

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Hlavní autoři:	Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2024-08-01
Edice:	Nanomaterials
Témata:	hafnium oxide sputtering orthorhombic substrate ferroelectricity
On-line přístup:	https://www.mdpi.com/2079-4991/14/17/1386
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