High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode

Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel diode MOSFET with a center P+ implanted structure (CIMCD–MOSFET) is pr...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Jaeyeop Na, Minju Kim, Kwangsoo Kim
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2022-09-01
Sarja:	Energies
Aiheet:	body diode high breakdown voltage high reliability MOS-channel diode reverse recovery silicon carbide
Linkit:	https://www.mdpi.com/1996-1073/15/19/6960
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