A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2023-06-01
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| Edice: | Micromachines |
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| On-line přístup: | https://www.mdpi.com/2072-666X/14/7/1282 |
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