High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel diode MOSFET with a center P+ implanted structure (CIMCD–MOSFET) is pr...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-09-01
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| Serie: | Energies |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/1996-1073/15/19/6960 |
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