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Vertical FET Optimization at Angstrom Nodes: A Comparative Study With Horizontal FET

For the first time, this study presents two novel vertical FET (VFET) structures and conducts a quantitative analysis to assess the competitiveness of VFET in comparison to two types of horizontal FET (HFET) which are nanosheet FET (NSFET) and forksheet FET (FSFET) targeting Angstrom nodes. The conv...

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Main Authors: Junjong Lee, Jinsu Jeong, Seunghwan Lee, Sanguk Lee, Yonghwan Ahn, Minchan Kim, Gunryeol Cho, Sunmin Yeou, Rock-Hyun Baek
Format: Artigo
Language:Inglês
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Back-side contact
Forksheet FET
horizontal FET
logic
Nanosheet FET
vertical FET
Online Access:https://ieeexplore.ieee.org/document/11124538/
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