Vertical FET Optimization at Angstrom Nodes: A Comparative Study With Horizontal FET

For the first time, this study presents two novel vertical FET (VFET) structures and conducts a quantitative analysis to assess the competitiveness of VFET in comparison to two types of horizontal FET (HFET) which are nanosheet FET (NSFET) and forksheet FET (FSFET) targeting Angstrom nodes. The conv...

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Autores principales:	Junjong Lee, Jinsu Jeong, Seunghwan Lee, Sanguk Lee, Yonghwan Ahn, Minchan Kim, Gunryeol Cho, Sunmin Yeou, Rock-Hyun Baek
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2025-01-01
Colección:	IEEE Journal of the Electron Devices Society
Materias:	Back-side contact Forksheet FET horizontal FET logic Nanosheet FET vertical FET
Acceso en línea:	https://ieeexplore.ieee.org/document/11124538/
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