Defect-impurity complex induced long-range ferromagnetism in GaN nanowires
Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (V _Ga ) exhibits lower formation energy compare...
Gorde:
| Egile Nagusiak: | , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IOP Publishing
2015-01-01
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| Saila: | Materials Research Express |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1088/2053-1591/2/12/126104 |
| Etiketak: |
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