Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA +  U approximation. We find that Ga vacancy (V _Ga ) exhibits lower formation energy compare...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	S Assa Aravindh, Iman S Roqan
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IOP Publishing 2015-01-01
Цуврал:	Materials Research Express
Нөхцлүүд:	GaN nanowire density functional theory magnetism electronic structure
Онлайн хандалт:	https://doi.org/10.1088/2053-1591/2/12/126104
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!