Defect-impurity complex induced long-range ferromagnetism in GaN nanowires
Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (V _Ga ) exhibits lower formation energy compare...
Gardado en:
| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IOP Publishing
2015-01-01
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| Series: | Materials Research Express |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1088/2053-1591/2/12/126104 |
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