Switching Behavior of Cascode GaN Under Influence of Gate Driver
With high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight. However, due to the cascode structure, coupling with the parasitics in g...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
China electric power research institute
2024-01-01
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| Серии: | CSEE Journal of Power and Energy Systems |
| Предметы: | |
| Online-ссылка: | https://ieeexplore.ieee.org/document/10246140/ |
| Метки: |
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