Switching Behavior of Cascode GaN Under Influence of Gate Driver
With high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight. However, due to the cascode structure, coupling with the parasitics in g...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
China electric power research institute
2024-01-01
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| Series: | CSEE Journal of Power and Energy Systems |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/10246140/ |
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