Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer...

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Bibliografski detalji

Glavni autori:	Penghao Zhang, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2023-07-01
Serija:	Micromachines
Teme:	GaN MIS-HEMTs buffer layer SiC substrate current collapse
Online pristup:	https://www.mdpi.com/2072-666X/14/8/1523
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