Código QR

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer...

ver descrição completa

Na minha lista:
Principais autores: Penghao Zhang, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2023-07-01
Colecção:Micromachines
Assuntos:
GaN
MIS-HEMTs
buffer layer
SiC substrate
current collapse
Acesso em linha:https://www.mdpi.com/2072-666X/14/8/1523
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados